Effect of γ-radiation on current transport in a gallium arsenide field-effect transistor

  • F. D. Kasimov Special Design Bureau of Space Instrumentation, Baku, Azerbaijan
  • A. E. Liutfalibekova Special Design Bureau of Space Instrumentation, Baku, Azerbaijan
Keywords: gallium arsenide, field-effect transistor, γ-radiation, current transport, substrate secondary currents

Abstract

Through modeling and experimental studies, it is shown that a multi-order increase in the channel current of a gallium arsenide field-effect transistor under the influence of γ-radiation is caused by the appearance of secondary currents in the substrate that are comparable to the currents in the film.
Published
2002-10-30
How to Cite
Kasimov, F. D., & Liutfalibekova, A. E. (2002). Effect of γ-radiation on current transport in a gallium arsenide field-effect transistor. Technology and Design in Electronic Equipment, (4–5), 13-15. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2002.4-5.13
Issue
No. 4–5 (2002): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2002 Kasimov F. D., Liutfalibekova A. E.

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