Negatron elements based on localized polycrystalline silicon films

Abstract

The results of studies on the reactive properties of elements based on locally grown polycrystalline silicon films and their behavior under illumination are described. It is shown that near the threshold switching voltage, the character of the reactive conductivity of the films changes from capacitive to inductive. When the films are switched to the low-resistance state in the investigated frequency range (0.465–10 MHz), the reactive component of conductivity is of an inductive nature.