Diagnostics of semiconductor structures in the development and production of microelectronics devices

  • L. D. Buyko «Integral» Scientific Production Association, Minsk, Belarus
  • V. N. Ponomar «Integral» Scientific Production Association, Minsk, Belarus
  • A. A. Soloninko «Integral» Scientific Production Association, Minsk, Belarus
Keywords: diagnostics, semiconductor structures, analytical equipment, single-crystal silicon, impurity control, film thickness

Abstract

The effectiveness of using unique analytical equipment at a large enterprise specializing in the development and production of microelectronics devices is demonstrated. The analytical facilities provide incoming inspection of the quantitative composition of impurities at a level >10¹³ at/cm³ in single-crystal silicon and semiconductor structures, as well as control of device element geometric dimensions and thicknesses of thin (>1.0 nm) dielectric, metal, and semiconductor films.

Published
2002-02-28
How to Cite
Buyko, L. D., Ponomar, V. N., & Soloninko, A. A. (2002). Diagnostics of semiconductor structures in the development and production of microelectronics devices. Technology and Design in Electronic Equipment, (1), 40-42. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2002.1.40
Issue
No. 1 (2002): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2002 Buyko L. D., Ponomar V. N., Soloninko A. A.

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