Омические контакты к материалам на основе нитрида индия
Анотація
Рассмотрены ключевые моменты в формировании омических контактов к нитрид-индиевыv пленкам, фокусируясь на n-InN и InAlN/GaN гетероструктурах. Детальный анализ исследований, проведенных за последние три десятилетия, позволяет определить основные принципы формирования подобных контактов. Приведены параметры контактов и оптимальные условия их достижения, рассмотрены различные типы металлизации и определены преимущества и недостатки каждого из них, учитывая основные требования, которым подобные контакты должны отвечать. Сделан акцент на перспективах использования многослойной металлизации с диффузионными барьерами. Рассмотрены общие подходы к формированию омических контактов к InAlN/GaN-гетероструктур.
Посилання
Davydov V. Yu., Klochikhin A. A., Emtsev V. V., Kurdyukov D. A., Ivanov S. V., Vekshin V. A., Bechstedt F., Furthmuller J., Aderhold J., Graul J., Mudryi A. V., Harima H., Hashimoto A., Yamamoto A., and Haller E. E. Band Gap of Hexagonal InN and InGaN Alloys // Рhys. stat. sol. (b), 2002, vol. 234, no 3, pp. 787-795. http://dx.doi.org/10.1002/1521-3951(200212)234:3<787::AID-PSSB787>3.0.CO;2-H
Wu J., Walukiewicz W., Yu K.M., Ager J.W., Haller E.E., Lu H., Schaff W.J. Unusual properties of the fundamental band gap of InN. Appl. Phys. Lett, 2002, vol. 80, no 21, pp. 3967-3969. http://dx.doi.org/10.1063/1.1482786
Davydov V. Yu., Klochikhin A. A. [Electronic and vibrational states in InN and InxGa1–xN solid solutions]. Semiconductors, 2004, vol. 38, iss. 8, pp. 861-898. http://dx.doi.org/10.1134/1.1787109 (Rus)
Mudryi A.V., Ivanyukovich A.V., Korotkii A.V., Emtsev V.V., Yakushev [Optical properties of InN powder and films] J Appl Spectrosc, 2006, vol. 73, no 1, pp. 368-371. http://dx.doi.org/10.1007/s10812-006-0041-0 (Rus)
Bhuiyan A. G., Hashimoto A., and Yamamoto A. Indium nitride (InN) : A review on growth, characterization, and properties. J. Appl. Phys, 2003, vol. 94, no 5, pp. 2779-2808. http://dx.doi.org/10.1063/1.1595135
Hadi W. A., Guram P. K., Shur M. S., O'Leary S. K. Steady-state and transient electron transport within wurtzite and zinc-blende indium nitride. J. Appl. Phys, 2013, vol. 113, no 11, pp. 113709-1 — 113709-6. http://dx.doi. org/10.1063/1.4795146
O’Leary S. K., Foutz B. E., Shur M. S., Eastman L. F. Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis. Appl. Phys. Lett, 2005, vol. 87, no 22, pp. 222103-1 – 222103-3. http://dx.doi.org/10.1063/1.2135876
Feng Z. C. III-nitride semiconductor materials. Imperial College Press, Singapore, 2006.
Shubina T.V., Jmerik V.N., Shalygin V.A. et al. [Multifunctional metal-semiconductor nanocomposites] Bull. Russ. Acad. Sci. Phys, 2010, vol. 74, no 1, pp. 68-71. http://dx.doi.org/10.3103/S1062873810010168 (Rus)
Shubina T.V., Andrianov A.V., Zakhar’in A.O., Jmerik V.N., Soshnikov I.P., Komissarova T.A., Usikova A.A., Kop’ev P.S., Ivanov S.V., Shalygin V.A., Sofronov A.N., Firsov D.A., Vorob’ev L.E., Gippius N.A., Leymarie J., Wang X., Yoshikawa A. Terahertz electroluminescence of surface plasmons from nanostructured InN layers. Appl. Phys. Lett, 2010, vol. 96, no 18, pp. 183106. http://dx.doi.org/10.1063/1.3425897
V. Lebedev, V. Cimalla, J. Pezoldt, M. Himmerlich, S. Krischok, J. A. Schaefer, O. Ambacher, F. M. Morales, J. G. Lozano, D. González. Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network. Journal of Applied Physics, 2006, vol. 100, no 9, pp. 094902-1 – 094902-13. http://dx.doi.org/10.1063/1.2363233
Dimakis E., Domagala J.Z., Delimitis A., Komninou Ph., Adikimenakis A., Iliopoulos E., Georgakilas A. Structural properties of 10 µm thick InN grown on sapphire (0001). Superlattices and Microstructures, 2006, vol. 40, pp. 246–252. http://dx.doi.org/10.1016/j.spmi.2006.09.012
Wei-Li Chen, Yan-Hsin Wang, Ming-Fei Chen, Man-Fang Huang, Jenn-Chyuan Fan. Defect structure study of epitaxial InN films by transmission electron microscopy and X-ray diffraction. Physica, 2010, vol. 42, pp. 1463–1468. http://dx.doi.org/10.1016/j.physe.2009.11.117.
Gallinat C. S., Koblmüller G., Feng Wu, Speck J. S. Evaluation of threading dislocation densities in In- and N-face InN. Journal of Applied Physics, 2010, vol. 107, no 5, pp. 053517-1 – 053517-8. http://dx.doi.org/10.1063/1.3319557
M. Levinstein, S. Rumyantsev and M. Shur Handbook Series on Semiconductor Parameters. World Scientific, London, 1996, vol. 1, 2.
NSM Archive – Physical Properties of Semiconductors. http://www.mattrop.ru.
Lu H., Schaff W. J., Eastman L. F., Stutz C. E. Surface charge accumulation of InN films grown by molecularbeam epitaxy. Applied physics letters, 2003, vol. 82, no 11, pp. 1736-1738. http://dx.doi.org/10.1063/1.1562340
Lebedev A.I. Fizika poluprovodnikovykh priborov. [Physics of semiconductor devices]. Moskow, Fizmatlit, 2008, 488 p. (Rus)
Blank T. V., Gol’dberg Yu. A. Mechanisms of current flow in metal-semiconductor ohmic contacts. Semiconductors, 2007, vol. 41, iss. 11, pp. 1263-1292. http://dx.doi.org/10.1134/s1063782607110012
Sachenko A. V., Belyaev A. E., Boltovets N. S., Brunkov P. N., Jmerik V. N., Ivanov S. V., Kapitanchuk L. M., Konakova R. V., Klad’ko V. P., Romanets P. N., Sai P. O., Safryuk N. V., Sheremet V. N. Temperature dependences of the contact resistivity in ohmic contacts to n+-InN. Semiconductors, 2015, vol. 49(4), pp. 461-471. http://dx.doi.org/10.1134/S1063782615040193
Ren F., Vartuli C.B., Pearton S.A., Abernathy C.R., Donovan S.M., MacKenzie J.D., Shul R.J., Zolper J.C., Lovejoy M.L., Boy A.G., Hagerott-Crawford M., Jones K.A. Comparison of ohmic metallization schemes for InGaAlN. Vac. Sci. Technol A, 1997, vol. 15(3), pp. 802-806. http://dx.doi.org/10.1116/1.580711
Vartuli C.B., Pearton S.J., Abernathy C.R., MacKenzie J.D., Lovejoy M.L., Shul R.J., Zolper Z.C., Baca A.G., Hagerot-Crawford M., Jones A., Ren F. Conduction mechanisms in W and WSix ohmic contacts to InGaN and InN. Sol. Stat. Electron. 1997, vol. 41(4), pp. 531-534. http://dx.doi.org/10.1016/S0038-1101(96)00188-8
Khanna R., Gila B. P., Stafford L., Pearton S. J., Ren F., Kravchenko I. I., Osinsky A. Thermal stability of Ohmic contacts to InN. Applied physics letters, 2007, vol. 90(16), pp. 162107-162107. http://dx.doi.org/10.1063/1.2724900
Smith M. D., O'Mahony D., Conroy M., Schmidt M., Parbrook P. J. InAlN high electron mobility transistor Ti/Al/Ni/Au ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy. Appl. Phys. Lett, 2015, vol. 107, pp. 113506-113509. http://dx.doi.org/10.1063/1.4930880
Ren F., Abernathy C. R., Pearton S. J., Wisk P. W. Thermal stability of Ti/Pt/Au nonalloyed ohmic contacts on InN. Applied physics letters, 1993, vol. 64(12), pp. 1508-1510. http://dx.doi.org/10.1063/1.111874
Chang C.-Y., Chi G.-C., Wang W.-M., Chen L.-C., Chen K.-H., Ren F., Pearton S.J. Transport properties of InN nanowires. Applied physics letters, 2005, 87(9), pp. 093112-1- 093112-3. http://dx.doi.org/: 10.1063/1.2037850
Kim S., Ryou J.-H., Dupuis R. D., and Kim H. Carrier transport mechanism of low resistance Ti/Al/Au ohmic contacts to AlInN/GaN heterostructures. Applied physics letters, 2013, vol. 102(5), pp. 052107-1 - 052107-4. http://dx.doi.org/10.1063/1.4790384
Durba A., Pearton S.J., Abernathy C.R., Lee J.W., Holloway P.H., Ren F. Microstructural stability of ohmic contacts to InxGa1–xN. J. Vac. Sci. Technol. B, 1996, vol. 14(4), pp. 2582-2587, http://dx.doi.org/10.1116/1.588771
Varthli C.B., Pearton S.J., Abernathy C.R., MacKenzie J.D., Shul R.J., Zolper J.C., Lovejoy M.L., Baca A.G., Hagerott-Crawford M. Thermal stability of W, WSix, and Ti/Al ohmic contacts to InGaN, InN, and InAlN. J.Vac. Sci. Technol. B, 1996, vol. 14(6), pp. 3520-3522, http://dx.doi.org/10.1116/1.588791
Chuah L. S., Hassan Z., Abu Hassan H. Effect of post annealing treatments on the characteristics of ohmic contacts to n-type InN. ICSE2006 Proc, 2006, pp. 614-617. http://dx.doi.org/10.1109/SMELEC.2006.380705
Qixin Guoa, Osamu Kato. Thermal stability of indium nitride single crystal films. Journal of Applied Physics, 1993, vol. 73(11), pp. 7969-7971. http://dx.doi. org/10.1063/1.353906
Vartuli C. B., Pearton S. J., Abernathy C. R., MacKenzie J. D., Lambers E. S. High temperature surface degradation of III–V nitrides. J. Vac. Sci. Technol. B, 1996, vol. 14(6), pp. 3523-3531. http://dx.doi.org/10.1116/1.588792
Kupka R. K., Anderson W. A. Minimal ohmic contact resistance limits to n-type semiconductors. J. Appl. Phys,1991, vol. 69, no 6, pp. 3623–3632. http://dx.doi.org/10.1063/1.348509
Kim H.-K., Jang J.-S., Park S.-J., Seong T.-J. Electrical and structural properties of W ohmic contacts to InGaN. J. Electrochem. Soc, 2000, vol. 147(4), pp. 1573-1576. http://dx.doi.org/10.1149/1.1393396
Donovan S. M., MacKenzie J. D., Abernathy C. R., Pearton S. J., Ren F., Jones K., Cole M. Thermal stability of ohmic contacts to InN. Solid-state electronics, 1997, vol. 42(10), pp. 1831-1833. http://dx.doi.org/10.1016/S0038-1101(98)00144-0
Lin M.E., Huang F.J., Morkoc H. Nonalloyed ohmic contacts on GaN using InN/GaN shortperiod superlattices. Applied physics letters, 1994, vol. 64(19), pp. 2557-2559. http://dx.doi.org/10.1063/1.111573
S. N. Mohammad. Contact mechanisms and design principles for alloyed ohmic contacts to n-GaN. J. Appl. Phys, 2004, vol. 95(12), pp. 7940-7953. http://dx.doi.org/10.1063/1.1712016
Ren F., Abernathy C. R., Chu S. N. G., Lothian J. R., Pearton, S. J. Use of InN for Ohmic contacts on GaAs/AlGaAs heterojunction bipolar transistors. Applied physics letters, 1995, vol. 66(12), pp. 1503-1505. http://dx.doi. org/10.1063/1.113669
Abernathy C.R., Pearton S.J., Ren F., Wisk P.W. Growth of InN for ohmic contact formation by electron cyclotron resonance metalorganic molecularbeam epitaxy. J.Vac. Sci. Technol. B, 1993, vol. 11(2), pp. 179-182. http://dx.doi.org/10.1116/1.586700
Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi. Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer. Applied physics letters, 2001, vol. 79(16), pp. 2588-2590. http://dx.doi.org/10.1063/1.1410336
Katz O., Mistele D., Meyler B., Bahir G.,Salzman J. Characteristics of InxAl1–xN–GaN high-electron mobility field-effect transistor. IEEE Transactions оn Electron Devices, 2005, vol. 52(2), pp. 146-150. http://dx.doi.org/10.1109/TED.2004.841281
Jessen G. H., Gillespie J. K., Via G. D., Crespo A., Langley D., Aumer M. E., Ward C. S., Henry H. G., Thomson D. B., Partlow D. P. RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz. IEEE Electron Device Lett, 2007, vol. 28(5), pp. 354-356. http://dx.doi.org/10.1109/LED.2007.895417
Sansaptak Dasgupta, Nidhi, David F. Brown, Feng Wu, Stacia Keller, James S. Speck, and Umesh K. Mishra. Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by InGaN regrowth.Applied physics letters, 2010, vol. 96(14), pp. 143504-1 —143504-3. http://dx.doi.org/10.1063/1.3374331
Yue Y., Sensale-Rodriguez B., Faria F., Fang T., Song B., Gao X., Guo S., Kosel T., Snider G., Fay P. InAlN/AlN/GaN HEMTs with regrown ohmic contacts and fT of 370 GHz. IEEE Electron Device Letters, 2012, vol. 33(7), pp. 988-990. http://dx.doi.org/10.1109/LED.2012.2196751
Pozzovivo G., Kuzmik J., Giesen C., Heuken M., Liday J., Strasser G., Pogany D. Low resistance ohmic contacts annealed at 600°C on a InAlN/GaN heterostructure with SiCl4 -reactive ion etching surface treatment. Phys. Status Solidi, 2009, vol. 6, no. S2, pp. S999–S1002. http://dx.doi.org/10.1002/pssc.200880839
Lee J., Yan M., Ofuonye B., Jang J., Gao X., Guo S., Adesida I. Low resistance Mo/Al/Mo/Au ohmic contact scheme to InAlN/AlN/GaN heterostructure. Phys. Status Solidi A 208, 2011, no. 7, pp. 1538–1540, http://dx.doi.org/10.1002/pssa.201001096
Lo C.-F., Liu L., Chang C. Y., Ren F., Craciun V., Pearton S. J., Heo Y. W., Laboutin O., Johnson J. W. Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures. J.Vac. Sci. Technol. B, 2011, vol. 29(2), pp. 021002-1 - 021002-5, http://dx.doi. org/10.1116/1.3545811
Tirelli S., Marti D., Sun H. F., Alt A. R., Carlin J. F., Grandjean N., Bolognesi C. R. Fully passivated AlInN/GaN HEMTs with fT/fMAX of 205/220 GHz. IEEE Electron Device Lett, 2011, vol. 32(10), pp. 1364-1366. http://dx.doi.org/10.1109/LED.2011.2162087
Lee D. S., Gao X., Guo S., Palacios T. InAlN/GaN HEMTs with AlGaN back barriers. IEEE Electron Device Letters, 2011, vol. 32(5), pp. 617-619. http://dx.doi.org/10.1109/LED.2011.2111352
Zhou L., Leach J. H., Ni X., Morkoс H., Smith D. J. Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors. Journal of Applied Physics, 2010, no 107, pp. 014508-1 - 014508-5. http://dx.doi.org/10.1063/1.3275241
Liu Y., Singh S. P., Ngoo Y. J., Kyaw L. M., Bera M. K., Lo Q. Q., Chor E. F. Low thermal budget Hf/Al/Ta ohmic contacts for InAlN/GaN-on-Si HEMTs with enhanced breakdown voltage. J.Vac. Sci. Technol. B, 2014, vol. 32(3), pp. 032201-1 - 032201-7. http://dx.doi.org/10.1116/1.4874599
Liu Y., Singh S. P., Kyaw L. M., Bera M. K., Ngoo Y. J., Tan H. R., Tripathy S., Lo G. Q., Chor E. F. Mechanisms of ohmic contact formation and carrier transport of low temperature annealed Hf/Al/Ta on In0.18Al0.82N/GaN-on-Si. ECS Journal of Solid State Science and Technology, 2015, vol. 4(2), pp. P30-P35. http://dx.doi.org/10.1149/2.0111502jss
Авторське право (c) 2016 П. О. Сай
Ця робота ліцензується відповідно до Creative Commons Attribution 4.0 International License.
