Investigation of electric and magnetic characteristics of high-temperature hall sensor based on AlGaN/GaN heterostructure

V. R. Stempitsky; Dinh Ha Dao

doi:10.15222/TKEA2017.1-2.28

V. R. Stempitsky Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
Dinh Ha Dao Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus

DOI: https://doi.org/10.15222/TKEA2017.1-2.28

Keywords: high-temperature Hall sensor, AlGaN/GaN heterostructures, computer simulation

Abstract

The paper presents research results on the characteristics of Hall sensor based on the AlGaN/GaN heterostructure with various geometric parameters of the active region operating in the temperature range from –25 to 400ºC. The research was performed using device-technological simulation. The active layer of the proposed structure is a two-dimensional electron gas region, which is formed between the barrier layer Al0,3Ga0,7N and the undoped GaN channel layer. The results (room temperature current-related magnetic sensitivity 66.4 V/(A·T) and very low temperature cross sensitivity of 0,0273%/ºC) indicate the prospects of the proposed solutions for the practical use.

References

Leonov A. V., Malykh A. A, Mordkovich V. N., Pavlyuk M. I. [Thin-film silicon magnetosensitive field-effect transistor Hall type with an extended operating temperature range up to 350°C]. Pis`ma v Zhurnal tekhnicheskoi fiziki, 2016, vol. 42, no. 2, pp. 30-36. (Rus)

Lu H., Sandvik P., Vertiatchikh A., Tucker J., Elasser A. High temperature Hall effect sensors based on AlGaN/GaN heterojunctions. Journal of Applied Physics, 2006, vol. 99, pp. 1-4. http://dx.doi.org/10.1063/1.2201339

Oszwaldowski. M., Berus T. Hall sensors made of n-InSb/GaAs epitaxial layers for low temperature applications. Thin Solid Films, 2006, vol. 515, pp. 2692-2695. http://dx.doi.org/10.1016/j.tsf.2006.07.023

Oszwaldowski. M., Berus T. Temperature coefficients of Hall sensors made of InSb/GaAs epitaxial layers. Sensors and Actuators, 2007, vol. 133, pp. 23-26. http://dx.doi.org/10.1016/j.sna.2006.03.037

Koide S., Takahashi H., Abderrahmane A. Shibasaki I., Sandhu A. High Temperature Hall sensors using AlGaN/GaN HEMT Structures. Journal of Physics: Conference Series 352, 2011, vol. 11, pp. 1-4. https://doi.org/10.1088/1742-6596/352/1/012009

Patrick M., Thomas P., Richard G. High temperature electronics. New York, CRC Press, Inc, 1997, 352 p. 7. Robert. J., Contreras S., Camassel J., Pernot J. 4H-SiC: A material for high temperature Hall sensor. Sensors and Actuators, 2002, vol. 97-98, P. 27-32. http://dx.doi.org/10.1016/S0924-4247(01)00812-3

Consejo. Ch., Contreras S., Konczewicz L., Lorenzini P., Cordier Y., Skierbiszewski C., Robert J. High temperature electrical investigation of (Al,Ga)N/GaN heterostructures Hall sensor applications. Phys. Stat. Sol., 2005, vol. 2, pp. 1438-1443. http://dx.doi.org/10.1002/pssc.200460482

Bouguen. L., Contreras S., Jouault B., Konczewicz L., Camassel J., Cordier Y., Azize M., Chenot S., Baron N. Investigation of AlGaN/AlN/GaN heterostructures for magnetic sensor application from liquid helium temperature to 300°C. Applied Physics Letters, 2008, vol. 92, pp. 043504-1–043504-3. http://dx.doi.org/10.1063/1.2838301

Paun M., Udrea F. Investigation into the capabilities of Hall cells integrated in a non-fully depleted SOI CMOS technological process. Sensors and Actuators A: Physical, 2016, vol. 242, pp. 43–49. http://dx.doi.org/10.1016/j.sna.2016.02.014

Jakub J., El-Ahmar S., Oszwaldowski M. Hall Sensors for Extreme Temperatures. Sensors, 2011, vol. 11, pp. 876-885. http://dx.doi.org/10.3390/s110100876

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