Deformation-induced effects in indium antimonide microstructures at cryogenic temperatures for sensor applications

Anatoliy Druzhinin; Yuriy Khoverko; Ihor Ostrovskii; Natalia Liakh-Kaguy; Olena Pasynkova

doi:10.15222/TKEA2019.3-4.03

Anatoliy Druzhinin Lviv Polytechnic National University, Ukraine; Institute of Low Temperature and Structure Research PAS, Poland https://orcid.org/0000-0002-4854-3464
Yuriy Khoverko Lviv Polytechnic National University, Ukraine; Institute of Low Temperature and Structure Research PAS, Poland https://orcid.org/0000-0002-7045-2729
Ihor Ostrovskii Lviv Polytechnic National University, Lviv, Ukraine
Natalia Liakh-Kaguy Lviv Polytechnic National University, Lviv, Ukraine https://orcid.org/0000-0002-1791-6053
Olena Pasynkova Lviv Polytechnic National University, Lviv, Ukraine

DOI: https://doi.org/10.15222/TKEA2019.3-4.03

Keywords: InSb whiskers, gauge factor, magnetoresistance, sensor

Abstract

The authors investigate deformation-induced changes in the electrophysical parameters of the indium antimonide microcrystals at cryogenic temperatures in strong magnetic fields up to 10 T. It is determined that for strongly doped InSb microcrystals, the gauge factor at liquid-helium temperature is GF_4.2K ≈ 72 for the charge carrier concentration of 2·10¹⁷ сm^–3, while being GF_4.2K ≈ 47 for the concentration of 6·10¹⁷ сm^–3, at ε = –3·10^–4 rel. un. For the development of magnetic field sensors based on the magnetoresistive principle, the effect of a giant magnetic resistivity reaching 720% at a temperature of 4.2 K is used.

References

Zutic I., Fabian Ja., Das Sarma S. Spintronics: Fundamentals and applications. Rev. Mod. Phys., 2004, vol. 76, iss. 2, 323. https://doi.org/10.1103/RevModPhys.76.323

Holota V.I., Kogut I., Druzhinin A., Khoverko Y. High sensitive active MOS photodetector on the local 3D SOI-structure. Advanced Materials Research, 2014, vol. 854, pp. 45–47. https://doi.org/10.4028/www.scientific.net/AMR.854.45

Druzhinin A., Ostrovskii I., Khoverko Yu., LiakhKaguy N. Negative magnetoresistance in indium antimonide whiskers doped with tin. Low Temperature Physics, 2016, vol. 42, pp. 453–457. https://doi.org/10.1063/1.4954778

Nepijko S.A., Kutnyakhov D., Odnodvorets L.V., Protsenko S.I. Sensor and microelectronic elements based on nanoscale granular systems. J. Nanopart. Res., 2011, vol. 13, iss. 12, p. 6263–6281. https://doi.org/10.1007/s11051-011-0560-3

Mangin S., Ravelosona D., Katine J.A. et al. Currentinduced magnetization reversal in nanopillars with perpendicular anisotropy. Nat. Mater., 2006, no. 5, pp. 210–215. https://doi.org/10.1038/nmat1595

Berger L. Emission of spin waves by a magnetic multilayer traversed by a current. Phys. Rev. B, 1996, vol. 54, iss. 13, 9353. https://doi.org/10.1103/PhysRevB.54.9353

Slonczewski J.C. Current-driven excitation of magnetic multilayers. J. Magn. Magn. Mater., 1996, vol. 159, iss. 1–2, L1–L7. https://doi.org/10.1016/0304-8853(96)00062-5

Waintal X., Myers E.B., Brouwer P.W., Ralph D.C. Role of spin-dependent interface scattering in generating current-induced torques in magnetic multilayers. Phys. Rev. B, 2000, vol. 62, iss. 18, 12317. https://doi.org/10.1103/PhysRevB.62.12317

Stiles M.D., Zangwill A. Anatomy of spin-transfer torque. Phys. Rev. B, 2002, vol. 66, iss. 1, 014407. https://doi.org/10.1103/PhysRevB.66.014407

Volkov S.О., Tkach О.P., Odnodvorets L.V., Huzhnya Ya.V. Magnetoresistive properties of nanosized film materials: variation of measuring currents and minimization of electronic noise. Journal Nano- And Electronic Physics, 2016, vol. 8, iss. 3, 0303. http://dx.doi.org/10.21272/jnep.8(3).03030

Druzhinin A., Ostrovskii I., Khoverko Yu., Yatsukhnenko S. Magnetic properties of doped Si whiskers for spintronics. Journal of Nano Research, 2016, vol. 39, pp. 43–54. https://doi.org/10.4028/www.scientific.net/JNanoR.39.43

Yatsukhnenko S., Druzhinin A., Ostrovskii I. et al. Nanoscale conductive channels in silicon whiskers with nickel impurity. Nanoscale Research Letters, 2017, vol. 12, iss. 78, pp. 1–7. https://doi.org/10.1186/s11671-017-1855-9

Druzhinin A., Ostrovskii I., Khoverko Y. et al. Peculiarities of magnetoresistance in InSb whiskers at cryogenic temperatures. Materials Research Bulletin, 2015, vol. 72, pp. 324–330. https://doi.org/10.1016/j.materresbull.2015.08.016

Druzhinin A., Ostrovskii I., Khoverko Yu. et al. Berry phase in strained InSb whiskers. Low Temperature Physics, 2018, vol. 44, pp. 1189–1194. https://doi.org/10.1063/1.5060974

Murakawa H., Bahramy M. S., Tokunaga M. et al. Detection of Berry’s phase in a bulk Rashba semiconductor. Science, 2013, vol. 342, iss. 6165, pp. 1490–1493. https://doi.org/10.1126/science.1242247

Veldhorst M ., Snelder M ., Hoek M . et al . Magnetotransport and induced superconductivity in Bi based three-dimensional topological insulators. Phys. Status Solidi, 2013, vol. 7, iss. 1–2, pp. 26–38. https://doi.org/10.1002/pssr.201206408

Nikolaeva A., Konopko L., Huberc T. E. et al. Effect of weak and high magnetic fields in longitudinal and transverse configurations on maneto-thermoelectric properties of quantum Bi wires. Surface Engineering and Applied Electrochemistry, 2014, vol. 50, iss. 1, pp. 57–62. http://dx.doi.org/10.3103/S1068375514010128

Druzhinin A.A., Lavitska E.N., Maryamova I.I., Kunert H.W. Stress imposing during microcrystals characterization at cryogenic temperatures. Advanced Engineering Materials, 2002, vol. 4, iss. 8, pp. 589–592. https://doi.org/10.1002/1527-648(20020806)4:8%3C589::AIDADEM589%3E3.0.CO;2-F

Xiaoling Zhang, Qingduan Meng, Liwen Zhang. Dependence of the deformation of 128×128 InSb focalplane arrays on the silicon readout integrated circuit thickness. The Open Electrical & Electronic Engineering Journal, 2015, vol. 9, pp. 170–174. http://dx.doi.org/10.2174/1874129001509010170

Liwen Zhang, Jiexin Pu1, Ming Shao, Na Li. Numerical simulation and analysis of thermal stress in 8×8 InSb detector integrated microlens arrays with underfill. Journal of Convergence Information Technology, 2012, vol. 7, iss. 8.

Botcharova E., Freudenberger J., Schultz L. Mechanical and electrical properties of mechanically alloyed nanocrystalline Cu–Nb alloys. Acta Materialia, 2006, vol. 54, iss. 12, pp. 3333–3341. https://doi.org/10.1016/j.actamat.2006.03.021

Smith C.S. Piezoresistance effect in germanium and silicon. Phys. Rev., 1954, vol. 94, iss. 1, pp. 42–49. https://doi.org/10.1103/PhysRev.94.42

Druzhinin A., Ostrovskii I., Khoverko Yu. et al. Variable-range hopping conductance in Si whiskers. Phys. Status Solidi A, 2014, vol. 211, iss. 2, pp. 504–508. https://doi.org/10.1002/pssa.201300162

Vanger А .I . , Zabrodsk i i А .G . , T isnek Т .V . Magnetoresistance of compensated Ge:As at ultrahigh frequencies in the metal-insulator phase transition region. FTP, 2000, vol. 34, iss. 7, pp. 774–782. (Rus). https://journals.ioffe.ru/articles/37181

Litvinenko K.L., Nikzad L., Pidgeon C.R. et al. Temperature dependence of the electron Landé g factor in InSb and GaAs. Phys. Rev. B, 2008, vol. 77, iss. 3, 033204. https://doi.org/10.1103/PhysRevB.77.033204

Barlian A.A., Park S.J., Mukundan V., Pruitt B.L. Design and characterization of microfabricated piezoresistive floating element-based shear stress sensors. Sens. Actuators A, 2007, vol. 134, iss. 1, pp. 77–87. https://doi.org/10.1016/j.sna.2006.04.035

Naumova O.V., Popov V.P., Aseev A.I. et al. Siliconon-insulator nanowire transistor for medical biosensors. In EuroSOI International conference, 2009, Goteborg, pp. 69–70. https://doi.org/10.1007/978-3-642-15868-1

Günel H. Y., Batov I. E., Hardtdegen H. et al. Supercurrent in Nb/InAs-nanowire/Nb Josephson junctions. J. Appl. Phys., 2012, vol. 112, iss. 3, 034316. https://doi.org/10.1063/1.4745024

Claeys C., Simon E. Perspectives of silicon-oninsulator technologies for cryogenic electronics. In: Hemment P.L.F., Lysenko V.S., Nazarov A.N. (eds) Perspectives, Science and Technologies for Novel Silicon on Insulator Devices. NATO Science Series (Series 3. High Technology), vol. 73. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-4261-8_23

Rife J.C., Miller M.M., Sheehan P.E. et al. Design and performance of GMR sensors for the detection of magnetic microbeads in biosensors. Sensors and Actuators, 2003, A107, pp. 209–218. https://doi.org/10.1016/S0924-4247(03)00380-7

Lagae L., Wirix-Speetjens R., Das J. et al. On-chip manipulation and magnetization assessment of magnetic bead ensembles by integrated spin-valve sensors. J. Appl. Phys., 2002, vol. 91, iss. 7786, pp. 7445–7447. https://doi.org/10.1063/1.1447288