Investigation of contact resistivity for Au–Ti–Pd–n-Si ohmic contacts for impatt diodes

V. V. Basanets; V. S. Slepokurov; V. V. Shinkarenko; R. Ya. Kudrik; Ya. Ya. Kudrik

doi:10.15222/TKEA2015.1.33

V. V. Basanets Research Institute «Orion», Kyiv, Ukraine
V. S. Slepokurov V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
V. V. Shinkarenko V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
R. Ya. Kudrik Ivan Franko National University of Lviv, Ukraine
Ya. Ya. Kudrik V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine

DOI: https://doi.org/10.15222/TKEA2015.1.33

Keywords: contact resistivity, ohmic contact, IMPATT diode, thermal-field emission

Abstract

Both contact resistivity of Au–Ti–Pd–n-Si ohmic contact and mechanism of current flow are studied in the 100 – 360 K temperature range. A method is proposed for reduction of error in determination of contact resistivity based on analysis of statistical dependences of the measured contact resistivity values (which are in the range of (0.9 – 2.0)^.10^–5 Ω^.cm²). On the basis of the contact resistivity temperature dependence, it is found for an ohmic contact with barrier height of 0.22 eV that the field mechanism of current flow is predominant in the 100 – 200 K temperature range, while thermal-field emission with activation energy of 0.08 eV is predominant in the 200 – 360 K temperature range.

References

Acharyya A., Banerjee J.P. Prospects of IMPATT devices phased on wide bandgap semiconductors as potential terahertz sources. Applied Nanoscience, 2012, vol. 4, no 1, pp.1-14.

Belyaev A. E. , Basanets V. V., Boltovets N. S. et al. Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes. Semiconductors, 2011, vol. 45, no 2, pp. 253-259. (Rus)

Lebedev A.I. Fizika poluprovodnikovykh priborov [Physics of semiconductor devices]. Moskow, Fizmatlit, 2008, 488 р. (Rus)

Dieter K. Schroder. Semiconductor material and device characterization. NY, John Wiley & Sons, 2006, 779 p.

Bazu M., Bajenescu T. Failure Analysis: A practical guide for manufacturers of electronic components and systems. NY, J. Wiley & Sons, 2011, 340 p.

Belyaev A.E., Boltovets N.S., Venger E.F. et al. Physicotechnological aspects of degradation of silicon microwave diodes. Kyiv, Akademperiodyka, 2011, 182 p.

Cox R.H., Strack H. Ohmic contacts for GaAs devices. Sol. Stat. Electron, 1967, vol. 10, no 12, pp. 1213-1218.

Brillson L. J. Contacts to semiconductors: fundamentals and technology. NY, Noyes Publ., 1993, 680 p.

Simon M. Sze, Kwok K. Ng. Physics of Semiconductor Devices, NY, John Wiley & Sons, 2006, 832 p.

Padovani F.A., Stratton R. Field and thermionic-field emission in Schottky barriers, Sol. Stat. Electron, 1966, vol. 9, no 7, pp. 695-707.