Elements of solid state electronics based on soi-structures and si whiskers for cryogenic temperatures
Abstract
The paper presents the study results of electrical properties of polycrystalline silicon films in silicon-on-insulator structures and Si whiskers in the temperature range of 4.2 – 70 K obtained by impedance measurements in the frequency range from 10 Hz to 250 kHz and the possibility of their use in solid-state electronics, functioning at cryogenic temperatures. Characteristics of samples obtained with impedance measurements allow predicting certain specifications of reactive elements of solid state electronics based on polycrystalline and single crystalline silicon, operable at low temperatures. Using the established dependencies, separate elements in the form of solid-state electronics capacitive and inductive elements as well as a combined system in an oscillatory circuit, operable at cryogenic temperatures, have been suggested. The features of developed system depend on the structure of samples and their doping level, which allows changing the required parameters of the elements of solid state electronics in a wide range.
References
Claeys C., Simon E. Perspectives of silicon-on-insulator technologies for cryogenic electronics. In book: Perspectives, science and technologies for novel silicon on insulator devices (Ed. by P.L.F. Hemment, V.S.Lysenko, A.N.Nazarov), Dordrecht, Kluwer Academic Publ., 2000, vol. 73, рp.233-247.
Kamins T. Polycrystalline silicon for integrated circuits and displays. Dordrecht, Kluwer Academic Publ., 1998, p. 378.
Druzhinin A., Maryamova I., Kogut I., Pankov Yu., Khoverko Yu., Palewski T. Polysilicon-in-insulator layers at cryogenic temperatures and high magnetic fields. In book: Science and technology of semiconductor-on-insulator structures and devices operating in a harsh environment (Ed. by D.Flandre, A.N. Nazarov, P.L.F.Hemment), Kluwer Acad. Publishers, Dordrecht, vol. 185, 2005, pp. 297-302.
Druzhinin A.A., Ostrovskii I.P., Khoverko Yu.M., Liakh-Kaguj N.S., Kogut Iu.R. Strain effect on magnetoresistance of SiGe solid solution whiskers at low temperatures. Materials science in semiconductor processing, 2011, vol. 14, no 1, pp. 18-22. https://doi.org/10.1016/j.mssp.2010.12.012
Druzhinin A.A., Ostrovskii I.P., Kogut Iu.R. [Whiskers of silicon, germanium, and their solid solutions in the sensor electronics]. Publishing House of Lviv Polytechnic National University, 2010, 200 p. (Ukr)
Grigorchak I.I., Ponedilok G.V. [Impedance spectroscopy]. Publishing House of Lviv Polytechnic National University, 2011, 352 p. (Ukr)
Druzhinin A.A., Kogut Iu.R., Khoverko Yu.M. [Structure of silicon-on-insulator electronics for the sensor]. Publishing House of Lviv Polytechnic National University, 2013, 236 p. (Ukr)
Druzhinin А., Ostrovskii I., Khoverko Yu., Nichkalo S., Kogut Iu. Impedance spectroscopy of polysilicon in SOI structures. Physica Status Solidi (C), 2014, vol. 11, no 1, pp. 156-159.
Mora-Sero I., Bisquert J., Fabregat-Santiago F. et al. Implications of the negative capacitance observed at forward bias in nanocomposite and polycrystalline solar cells. Nano Letters, 2006, vol. 6, iss. 4, pp. 640-650. https://doi.org/10.1021/nl052295q
Impedance spectroscopy: theory, experiment and applications (Ed. by E.Barsoukov, J.R. Macdonald). New Jersey, Wiley-Interscience, 2005, 606 p.
Druzhinin A., Khoverko Yu., Kogut I., Koretskii R. Properties of low-dimentional polysilicon in SOI structures for low temperature sensors. Advanced Materials Research, 2014, vol. 854, pp. 49-55. https://doi.org/10.4028/www.scientific.net/AMR.854.49
Druzhinin A., Ostrovskii I., Khoverko Yu., Nichkalo S., Koretskyy R., Kogut Iu. Variable-range hopping conductance in Si whiskers. Phys. Status Solidi (A), 2014, vol. 211, 2iss. 2, рp. 504-508. https://doi.org/10.1002/pssa.201300162
Copyright (c) 2014 Druzhinin A. A., Osrovskkii I. P., Khoverko Yu. M., Koretskyy R. N.
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