Ionization annealing of semiconductor crystals. Part one: theoretical background

A. S. Garkavenko; V. A. Mokritskii; O. V. Banzak; V. A. Zavadskii

doi:10.15222/TKEA2014.4.50

A. S. Garkavenko Wissenschaftliche Vereinigung «Geisteskraft», Kornwestheim, Germany
V. A. Mokritskii Odesa National Polytechnic University, Odesа, Ukraine
O. V. Banzak Odesa National Academy of Telecommunications named after A. S. Popov, Odesа, Ukraine
V. A. Zavadskii Odessa National Maritime Academy, Odesа, Ukraine

DOI: https://doi.org/10.15222/TKEA2014.4.50

Keywords: laser, annealing, electron beam

Abstract

During irradiation of semiconductor crystals with powerful (high current) pulsed high-energy electron beams, a new type of annealing has been obtained. We could obtain new results and to find out physical nature of this phenomenon due to short and powerful bunches of electrons with high energy. Given its theoretical justification, the new annealing type has been called the "ionization annealing".

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