Fabrication, properties and application of Ge-on-GaAs thin nanoheterogeneous films

E. F. Venger; P. M. Lytvyn; L. A. Matveeva; V. F. Mitin; V. V. Kholevchuk

doi:10.15222/TKEA2014.4.39

E. F. Venger V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
P. M. Lytvyn V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
L. A. Matveeva V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
V. F. Mitin V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
V. V. Kholevchuk V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine

DOI: https://doi.org/10.15222/TKEA2014.4.39

Keywords: Ge films, growth rate, surface morphology, electronic and optical properties, intrinsic mechanical stresses

Abstract

Ge thin films condensation in vacuum onto semiinsulating GaAs(100) substrates was investigated. The methods of atomic-force microscopy, optical spectroscopy, measurement of intrinsic mechanical stresses in film, and electronic properties were used for this investigation. It was found that it is possible to obtain thin nanoheterogeneous monocrystalline dislocation-free films with low intrinsic mechanical stresses and two-dimension percolation-type conductivity, as well as high temperature sensitivity that can be used for IR and electronics technologies.

References

Venger E.F., Konakova R.V., Matveeva L.A. et al. [Germanium films on Gallium arsenide: structural, electronic, and optical properties]. Fizika i khimiya tverdogo tila. 2009, vol. 10, no 2, pp. 315-324. (Ukr)

Mitin V. F. Preparation and properties of heavily doped and strongly compensated Ge films on GaAs. Journal of Applied Physics. 2010, vol. 107, iss. 3, pp. 033720. http://dx.doi.org/10.1063/1.329096.

Mitin V. F., Lazarov V. K., Lytvyn P. M. et al. Tailoring the electrical properties of Ge/GaAs by film deposition rate and preparation of fully compensated Ge films. Physical Review B. 2011, vol. 84, pp. 125316. http://dx.doi.org/0.1103/PhysRevB.84.125316.

Lazarov V. K., Lari L., Lytvyn P. M. et al. Structural study of Ge/GaAs thin films. Journal of Physics: Conference Series 371. 2012, pp. 012040. http://dx.doi.org/10.1088/1742-6596/371/1/012040.

Mitin V. F., Lazarov V. K., Lari L. et al. Effect of film growth rate and thickness on properties of Ge/GaAs(100). Thin Solid Films. 2014, vol. 550, pp. 715-722. http://dx.doi.org/10.1016/j.tsf.2013.10.049.

Kholevchuk V. V., Kladko V. P., Kuchuk A. V. et al. Study of structure and intrinsic stresses of Ge thin films on GaAs. Proceedings of the International Conference “Nanomaterials: Application and Properties”. Ukraine, Alushta. 2013, vol 2, no 1, pp. 01PC120.

Goffman R.U. [Mechanical properties of thin condensed films]. In book: Fizika tonkich plenok [Physics of Thin Films]. Ed. by: V. G. Khass, R. E. Tun. Moscow. Mir. 1968, pp. 225-298. (Rus)

Lastovickova M. Some differences in the exponential tail behaviour of the fundamental absorption edge in amorphous and crystalline materials. Czech. J. Phys. B. 1972, vol. 22. pp. 418-424.

Skinner B., Chen T., Shklovskii B.I. Why is the bulk resistivity of topological insulator so small? Phys. Rev. Lett. 2012, vol.109, pp. 176801. http://dx.doi.org/10.1103/PhysRevLett.109.176801.

Chen T., Shklovskii B. I. Anomalously small resistivity and thermopower of strongly compensated semiconductors and topological insulators. Phys. Rev. B. 2013, vol. 87, pp.165119. http://dx.doi.org/10.1103/PhysRevB.87.165119.

Dunlap W. C. Some properties of high resistivity p-type germanium. Phys. Rev. 1950, vol. 79, pp. 286-292.

Morin F. J. and Maita J. P. Conductivity and Hall effect in the intrinsic range of germanium. Phys. Rev. 1954, vol. 94, pp. 1525-1529.