Methods and mechanisms of gettering of silicon structures in the production of integrated circuits

  • V. A. Pilipenko Branch "Belmicrosystems" of JSC "Integral", Minsk, Belarus
  • V. A. Gorushko Branch "Belmicrosystems" of JSC "Integral", Minsk, Belarus
  • A. N. Petlitskiy Branch "Belmicrosystems" of JSC "Integral", Minsk, Belarus
  • V. V. Ponaryadov Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
  • A. S. Turtsevich JSC INTEGRA, Minsk, Belarus
  • S. V. Shvedov Branch "Belmicrosystems" of JSC "Integral", Minsk, Belarus
Keywords: silicon, getter, laser, rapidly diffusing impurity, gettering center, dislocation, stacking fault

Abstract

Increasing the degree of integration of hardware components imposes more stringent requirements for the reduction of the concentration of contaminants and oxidation stacking faults in the original silicon wafers with its preservation in the IC manufacturing process cycle. This causes high relevance of the application of gettering in modern microelectronic technology. The existing methods of silicon wafers gettering and the mechanisms of their occurrence are considered.

Published
2013-06-14
How to Cite
Pilipenko, V. A., Gorushko, V. A., Petlitskiy, A. N., Ponaryadov, V. V., Turtsevich, A. S., & Shvedov, S. V. (2013). Methods and mechanisms of gettering of silicon structures in the production of integrated circuits. Technology and Design in Electronic Equipment, (2–3), 43-57. Retrieved from http://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.2-3.43
Issue
No. 2–3 (2013): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2013 Pilipenko V. A., Gorushko V. A., Petlitskiy A. N., Ponaryadov V. V., Turtsevich A. S., Shvedov S. V.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.