Electrical properties anisotype heterojunctions n-TiO2:Mn/p-CdTe

  • A. I. Mostovyi Yurii Fedkovych Chernivtsi National University, Chernivtsy, Ukraine
  • V. V. Brus Yurii Fedkovych Chernivtsi National University, I. M. Frantsevich Institute for problems of materials science of NAS of Ukraine, Chernivtsi department, Ukraine
  • P. D. Maryanchuk Yurii Fedkovych Chernivtsi National University, Chernivtsy, Ukraine
  • K. S. Ulyanitskii Yurii Fedkovych Chernivtsi National University, Chernivtsy, Ukraine
Keywords: heterojunction, thin film, doping, TiO2, CdTe

Abstract

The authors have investigated electronic properties of n-TiO2:Mn/p-CdTe anisotype heterojunctions, produced by the method of electron-beam evaporation of TiO2:Mn film on single-crystal CdTe substrates in vacuum. The dominant mechanism of charge transport in the forward and reverse bias has been established.

Published
2013-02-18
How to Cite
Mostovyi, A. I., Brus, V. V., Maryanchuk, P. D., & Ulyanitskii, K. S. (2013). Electrical properties anisotype heterojunctions n-TiO2:Mn/p-CdTe. Technology and Design in Electronic Equipment, (1), 45-48. Retrieved from http://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.1.45
Issue
No. 1 (2013): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2013 Mostovyi A. I., Brus V. V., Maryanchuk P. D., Ulyanitskii K. S.

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