Features of manufacturing Cd1–xZnxTe ionizing radiation detector

  • Z. F. Tomashik V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • I. B. Stratiichuk V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • V. N. Tomashik V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • S. I. Budzulyak V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • І. І. Gnativ V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • V. K. Komar Institute for Single Crystals of NASU, Kharkiv, Ukraine
  • N. G. Dubina Institute for Single Crystals of NASU, Kharkiv, Ukraine
  • A. P. Lots’ko V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • D. V. Korbutyak V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • L. A. Demchina V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • N. D. Vakhnyak V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
Keywords: radiation detectors, semiconductor, chemical etching, chemical-dynamic polishing, chemical-mechanical polishing

Abstract

The article describes a newly-developed method of manufacturing of an operating element of the Cd1–xZnxTe-detector of ionizing radiation with high sensitivity to low-energy gamma radiation of the americium 241Am radioactive isotope. The proposed two-step method of chemical surface treatment with the use of new bromine releasing polishing etchants significantly improves the quality of the detector material and increases its specific sensitivity to ionizing radiation. This allows to use smaller Cd1–xZnxTe plates, which results in lowering of the cost of detectors.

Published
2013-02-18
How to Cite
Tomashik, Z. F., Stratiichuk, I. B., Tomashik, V. N., Budzulyak, S. I., GnativІ. І., Komar, V. K., Dubina, N. G., Lots’ko , A. P., Korbutyak, D. V., Demchina, L. A., & Vakhnyak, N. D. (2013). Features of manufacturing Cd1–xZnxTe ionizing radiation detector. Technology and Design in Electronic Equipment, (1), 42-44. Retrieved from http://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.1.42