Circuit design of VLSI for microelectronic coordinate-sensitive detector for material element analysis

  • V. P. Sidorenko Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • V. G. Verbitskii Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • Yu. V. Prokofiev Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
Keywords: VLSI, CMOS technology, microelectronic coordinate-sensitive detector, elemental analysis, convertor amplifier, 10-bit counters

Abstract

There has been designed, manufactured and tested a VLSI providing as a part of the microelectronic coordinate-sensitive detector the simultaneous elemental analysis of all the principles of the substance. VLSI ensures the amplifier-converter response on receiving of 1,6.10–13 С negative charge to its input. Response speed of the microcircuit is at least 3 MHz in the counting mode and more than 4 MHz in the counter information read-out mode. The power consumption of the microcircuit is no more than 7 mA.

Published
2012-08-30
How to Cite
Sidorenko, V. P., Verbitskii, V. G., & Prokofiev, Y. V. (2012). Circuit design of VLSI for microelectronic coordinate-sensitive detector for material element analysis. Technology and Design in Electronic Equipment, (4), 39-46. Retrieved from http://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.4.39