Radiation technology for improvement of ohmic contacts to the electronic device elements

  • R. V. Konakova V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • Е. Yu. Kolyadina V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • L. А. Matveeva V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • P. L. Nelyuba V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • V. V. Shynkarenko V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
Keywords: microwave annealing, fullerene films, metallization

Abstract

Two types of metallization (Au, Ti) to a fullerene-bearing material are investigated. The advantages of microwave annealing are noted. Microwave annealing of polymer-fullerene layers with both metallizations is studied; the resistance decreases in both cases. The titanium metallization seems to be more promising than the gold one. The mechanisms responsible for titanium metallization quality are presented.

Published
2010-12-26
How to Cite
Konakova, R. V., KolyadinaЕ. Y., MatveevaL. А., Nelyuba, P. L., & Shynkarenko, V. V. (2010). Radiation technology for improvement of ohmic contacts to the electronic device elements. Technology and Design in Electronic Equipment, (5–6), 40-42. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.5-6.40
Issue
No. 5–6 (2010): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2010 Konakova R. V., Kolyadina Е. Yu., Matveeva L. А, Nelyuba P. L., Shynkarenko V. V.

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