The adsorptive-kinetic model of in-situ phosphorus doped film polysilicon deposition process

Abstract

The investigation of deposition kinetics of in-situ phosphorus doped polysilicon films has been performed. The adsorptive-kinetic model of in-situ phosphorus doped polysilicon deposition has been developed. The values of heterogeneous reaction constants and constants, which describe the desorption process for monosilane and phosphine, have been defined. The optimal process conditions, which provide the acceptable deposition rate, thickness uniformity, high doping level and conformal step coverage, have been founded.