No. 6 (2009): Tekhnologiya i konstruirovanie v elektronnoi apparature

Articles

• Matrix silicon microcathodes for field emission displays

  А. A. Druzhynin, V. I. Golota, I. T. Kogut, Yu. M. Khoverko

  3-8

  • PDF (Українська)
• Method of calculation of thin-film resistor electrode’s impedance

  V. G. Spirin

  9-14

  • PDF (Українська)
• The biometric information gathering device with use of tensotransistor

  V. V. Zhiltsov, V. L. Kostenko

  15-18

  • PDF (Українська)
• High resolution differential thermometer

  Z. Yu. Gotra, R. L. Holyaka, S. V. Pavlov, S. S. Kulenko, O. V. Manus

  19-23

  • PDF (Українська)
• The radiowave sensors of thermal power stations flue-gas

  P. E. Ivanova, V. F. Radchenko, A. E. Khanamirov, A. V. Khryunov

  24-30

  • PDF (Українська)
• Multifunctional homojunction gallium arsenide n–p–m-structure

  A. V. Karimov, D. M. Yodgorova, О. А. Abdulkhaev, F. A. Giyasova, J. T. Nazarov

  31-34

  • PDF (Українська)
• Effect of thermal annealing on an anisotropy of electroconductivity and photoconductivity of nanostructured silicon

  P. A. Forsh, Е. А. Forsh, M. N. Martyshov, V. Yu. Timoshenko, P. K. Kashkarov

  35-37

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• Improvement of band selectivity of electromagnetic crystals

  A. I. Nazarko, Ju. F. Timofeeva, E. A. Nelin, V. I. Popsuj

  38-41

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• Principles of low energy ion beam formation in single-grid ion optical system

  S. V. Dudin, D. V. Rafalskyi

  42-45

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• Peculiarity of plasmachemical etching of silicon plate edges of photoelectric converters

  O. A. Fedorovich, M. P. Kruglenko, B. P. Polozov

  46-49

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• The adsorptive-kinetic model of in-situ phosphorus doped film polysilicon deposition process

  O. Yu. Nalivaiko, A. S. Turtsevich

  50-55

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• Mathematical models for chemical bonds forming of CdSb–ZnSb solid solutions

  A. A. Ashcheulov, I. V. Gutsul, O. N. Manyk, Т. O. Manyk

  56-59

  • PDF (Українська)