Physicotechnological aspects of low-voltage suppressors developement on the silicon base

Abstract

It is shown that by arsenic diffusion alloying of silicon plates in conditions of deaerated quartz ampoule the most effective is the use of a compound source in the form of crystal arsenic and silicon powder of boron-implanted silicon grade with base impurity (boron) concentration not less than the concentration of base impurity in alloyed silicon plates. The work defines experimental values of surface concentration, proper and effective diffusion coefficients that fit diffusion conditions of As inside ampoule for 2 h at temperature 1423 K and pressure of As steams of 2·105 Pa. The received results are of interest in designing and producing of low-voltage (less than 7 V) suppressors on the silicon base.