Reliability growth of thin film resistors contact

  • A. N. Lugin «RI of Mechatronic Devices» FSUE, Penza, Russia
  • M. M. Ozemsha «RI of Mechatronic Devices» FSUE, Penza, Russia
Keywords: contact, thin film resistor, current density, dissipation power

Abstract

Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

Published
2010-12-26
How to Cite
Lugin, A. N., & Ozemsha, M. M. (2010). Reliability growth of thin film resistors contact. Technology and Design in Electronic Equipment, (5–6), 11-14. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.5-6.11
Issue
No. 5–6 (2010): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2010 Lugin A. N., Ozemsha M. M.

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This work is licensed under a Creative Commons Attribution 4.0 International License.