The mercury microprobe for investigation of local electrophysical properties of semiconductor structures

  • V. M. Popov Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • A. S. Klimenko Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • A. P. Pokanevich Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • Yu. M. Shustov Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
Keywords: MIS structure, mercury probe, electrically active defects, capacity-voltage characteristic, mechanical stresses

Abstract

The construction of mercury microprobe has been proposed for measurement of electrophysical characteristics of semiconductor materials and IS(MIS) structures with 5—25 micron locality. Local electrophysical properties of technological Si–SiO2 structures with thin oxides in the region of electrically active defects on the silicon surface have been investigated. The influence of mechanical stresses near the edge of MIS structure electrodes on the local values of fixed charge in oxide has been shown.

Published
2010-02-26
How to Cite
Popov, V. M., Klimenko, A. S., Pokanevich, A. P., & Shustov, Y. M. (2010). The mercury microprobe for investigation of local electrophysical properties of semiconductor structures. Technology and Design in Electronic Equipment, (1), 35-38. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.1.35
Issue
No. 1 (2010): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2010 Popov V. M., Klimenko A. S., Pokanevich A. P., Shustov Yu. M.

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