Forming of 4НSiC p–i–n-diodes mesastructures by the ion-plasmous etching method

  • M. S. Boltovets Research Institute «Orion», Kyiv, Ukraine
  • A. G. Borisenko Research Institute «Orion», Kyiv, Ukraine
  • V. N. Ivanov Research Institute «Orion», Kyiv, Ukraine
  • О. А. Fedorovich Institute for Nuclear Research of NASU, Kyiv, Ukraine
  • V. A. Krivutsa Institute for Nuclear Research of NASU, Kyiv, Ukraine
  • B. P. Polozov Institute for Nuclear Research of NASU, Kyiv, Ukraine
Keywords: p–i–n-diode, 4NSiC silicon carbide, ion-plasma etching, silicon etching, mesastructure, diode chip

Abstract

The results of research and optimization of 4НSiC p–i–n-diodes mesastructures manufacturing method are presented, as well as analysis of current-voltage characteristics and switching characteristics of p–i–n-diodes in the 25—500°C temperature range.

Published
2009-10-30
How to Cite
Boltovets, M. S., Borisenko, A. G., Ivanov, V. N., FedorovichО. А., Krivutsa, V. A., & Polozov, B. P. (2009). Forming of 4НSiC p–i–n-diodes mesastructures by the ion-plasmous etching method. Technology and Design in Electronic Equipment, (5), 45-48. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.5.45
Issue
No. 5 (2009): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2009 Boltovets M. S., Borisenko A. G., Ivanov V. N., Fedorovich О. А., Krivutsa V. A., Polozov B. P.

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This work is licensed under a Creative Commons Attribution 4.0 International License.