The correlation between parameters of gallium arsenic epitaxy layers and technology of growth’s process

  • A. V. Karimov Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • D. M. Yodgorova Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • E. N. Yakubov Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
Keywords: p–n-junction, epitaxy, concentration, temperature, mobility

Abstract

The correlation between mobility and carriers concentration and growth’s conditions of gallium arsenic layers by liquid phase epitaxy is established. It is possible to obtain layers with required mobility and concentration of charge carriers by changing of technology parameters of growth’s process.

Published
2009-10-30
How to Cite
Karimov, A. V., Yodgorova, D. M., & Yakubov, E. N. (2009). The correlation between parameters of gallium arsenic epitaxy layers and technology of growth’s process. Technology and Design in Electronic Equipment, (5), 38-41. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.5.38
Issue
No. 5 (2009): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2009 Karimov A. V., Yodgorova D. M., Yakubov E. N.

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