Ultraviolet photosensors based on ZnS thin films

  • Yu. N. Bobrenko V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • N. V. Yaroshenko V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • G. I. Sheremetova V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • T. V. Semikina V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • B. S. Atdaev V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
Keywords: surface-barrier structure, ultraviolet radiation, photodetector, photosensitivity, thin film

Abstract

High efficient photodiodes on the base of р-Cu1,8S/n-ZnS/(ZnS)х(CdSe)1–х/CdSe/Mo-structure with variband interlayer were fabricated. Optimization of this layer thickness was shown to be efficient method of reduction of photosensitivity behind UV region while preserving one in UV region.

Published
2009-10-30
How to Cite
Bobrenko, Y. N., Yaroshenko, N. V., Sheremetova, G. I., Semikina, T. V., & Atdaev, B. S. (2009). Ultraviolet photosensors based on ZnS thin films. Technology and Design in Electronic Equipment, (5), 29-31. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.5.29
Issue
No. 5 (2009): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2009 Bobrenko Yu. N., Yaroshenko N. V., Sheremetova G. I., Semikina T. V., Atdaev B. S.

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This work is licensed under a Creative Commons Attribution 4.0 International License.