Development of scintillators on the basis of AIIBVI compounds for radiation instruments used in medical and technical applications

  • N. G. Starzhinskiy Institute for Scintillation Materials of the NAS of Ukraine, Kharkiv, Ukraine
  • I. M. Zenya Institute for Scintillation Materials of the NAS of Ukraine, Kharkiv, Ukraine
  • K. A. Katrunov Institute for Scintillation Materials of the NAS of Ukraine, Kharkiv, Ukraine
  • V. D. Ryzhikov Institute for Scintillation Materials of the NAS of Ukraine, Kharkiv, Ukraine
Keywords: AIIBVI compounds crystals, scintillation characteristics, luminescence centers, ionizing radiation detectors

Abstract

The physico-technological problems of obtaining and the main properties of scintillation materials based on zinc selenide and other AIIBVI compounds are considered. The influence of the properties of doping impurities on the processes of formation of complex lattice defects acting as luminescence centers has been determined. It is shown that such property features as high light output and very low afterglow level, as well as the unique combination of scintillation and semiconductor properties, make it possible to use them in various fields of radiation instrumentation.

Published
2009-06-30
How to Cite
Starzhinskiy, N. G., Zenya, I. M., Katrunov, K. A., & Ryzhikov, V. D. (2009). Development of scintillators on the basis of AIIBVI compounds for radiation instruments used in medical and technical applications. Technology and Design in Electronic Equipment, (3), 51-58. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.3.51
Issue
No. 3 (2009): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2009 Starzhinskiy N. G., Zenya I. M., Katrunov K. A., Ryzhikov V. D.

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