1.
Karimov AV, Yodgorova DM, Yakubov EN. The correlation between parameters of gallium arsenic epitaxy layers and technology of growth’s process. TKEA [Internet]. 2009Oct.30 [cited 2025Dec.2];(5):38-1. Available from: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.5.38