Karimov, A. V., D. M. Yodgorova, and O. A. Abdulkhaev. “Gallium Arsenide p+–n–p+-Structures With Impoverished Base Area”. Technology and design in electronic equipment, no. 3 (June 30, 2009): 28-31. Accessed December 2, 2025. https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.3.28.