Bonchyk, A. Yu., I. I. Izhnin, S. G. Kyjak, and G. V. Savytsky. 2005. “Influence of Ion Implantation and Photon Annealing Regimes on the Parameters of Implanted N-GaAs:Si Layers”. Technology and Design in Electronic Equipment, no. 3 (June), 3-4. https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.03.