Bonchyk, A. Y., Izhnin, I. I., Kyjak, S. G., & Savytsky, G. V. (2005). Influence of ion implantation and photon annealing regimes on the parameters of implanted n-GaAs:Si layers. Technology and Design in Electronic Equipment, (3), 3-4. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.03