Modeling of a photodiode structure based on a heterojunction ZnO/Si

Ihor Virt; Ivan Padalka

doi:10.15222/TKEA2026.1.17

Ihor Virt Ivan Franko State Pedagogical University of Drogobych, Ukraine https://orcid.org/0000-0001-7200-6055
Ivan Padalka Ivan Franko State Pedagogical University of Drogobych, Ukraine https://orcid.org/0009-0007-4071-5878

DOI: https://doi.org/10.15222/TKEA2026.1.17

Keywords: photovoltaic cell, photodetector, numerical simulation, electron transport material (ETM), ZnO, heterostructure, SCAPS-1D program

Abstract

In this work, a self-powered photodetector based on a bulk ZnO/Si p–n heterojunction is numerically investigated and analyzed using the Solar Cell Capacitance Simulator in One Dimension (SCAPS-1D). The energy band diagram, electron-hole generation and recombination rates, current-voltage (J–V) characteristics, spectral photosensitivity response, and specific detectivity are examined. To optimize photodetector performance, the effects of absorber layer thickness, shallow acceptor and donor densities, and defect density were systematically studied. Various electron transport parameters of ZnO were also considered. The responsivity and specific detectivity of the simulated photodetector are 0.23 A/W and 1.1·10¹⁰ Jones, respectively.

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