The mechanism of formation of the interlayer quantum wires in zinc-doped Bi2Te3

  • A. P. Alieva Azerbaijan Technical University, Baku, Azerbaijan
  • F. K. Aleskerov NGO «Selen» NAS RA, Baku, Azerbaijan
  • S. Sh. Kakhramanov NGO «Selen» NAS RA, Baku, Azerbaijan
  • S. A. Nasibova Azerbaijan Technical University, Baku, Azerbaijan
  • E. D. Moroidor Istanbul Technical University "Yildiz", Istanbul, Turkey
  • M. Pishkin Istanbul Technical University "Yildiz", Istanbul, Turkey
Keywords: quantum dots, nanowires, migration of atoms, morphology, topological insulators, clusters, diffusion, aggregation

Abstract

Nanowires formation process on a (0001) surface of Bi2Te3 is studied. It has been established that on interlayer urface Te(1)—Te(1) there is a process of migration of atoms, moving and coagulation of clusters on the basis of Zn atoms. As a result of diffusion-limited aggregation the structures with quantum dots are formed, from which nanowires are self-organized. Such superficial structures play regulating role in working out the topological insulators based on A2VB3VI and increase thermoelectric efficiency of a composite.

Published
2012-06-25
How to Cite
Alieva, A. P., Aleskerov, F. K., Kakhramanov, S. S., Nasibova, S. A., Moroidor, E. D., & Pishkin, M. (2012). The mechanism of formation of the interlayer quantum wires in zinc-doped Bi2Te3. Technology and Design in Electronic Equipment, (3), 46-48. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.3.46
Issue
No. 3 (2012): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2012 Alieva A. P., Aleskerov F. K., Kakhramanov S. Sh., Nasibova S. A., Moroidor E. D., Pishkin M.

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