The influence of silicon wafer thickness on characteristics of multijunction solar cells with vertical p–n-junctions

  • A. B. Gnilenko Institute of transport systems and technologies of NAS of Ukraine ("TRANSMAG"), Dnipro, Ukraine
  • V. A. Dzenzerskii Institute of transport systems and technologies of NAS of Ukraine ("TRANSMAG"), Dnipro, Ukraine
  • S. V. Plaksin Institute of transport systems and technologies of NAS of Ukraine ("TRANSMAG"), Dnipro, Ukraine
  • L. M. Pogorelaya Institute of transport systems and technologies of NAS of Ukraine ("TRANSMAG"), Dnipro, Ukraine
Keywords: multijunction solar cell, vertical p–n-junction, silicon wafer, computer simulation, Silvaco TCAD software package

Abstract

A multijunction silicon solar cell with vertical p–n junctions consisted of four serial n+–p–p+-structures was simulated using Silvaco TCAD software package. The dependence of solar cell characteristics on the silicon wafer thickness is investigated for a wide range of values.

Published
2012-02-28
How to Cite
Gnilenko, A. B., Dzenzerskii, V. A., Plaksin, S. V., & Pogorelaya, L. M. (2012). The influence of silicon wafer thickness on characteristics of multijunction solar cells with vertical p–n-junctions. Technology and Design in Electronic Equipment, (1), 27-29. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.1.27
Issue
No. 1 (2012): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2012 Гниленко А. Б., Дзензерский В. А., Плаксин С. В., Погорелая Л. М.

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