Information readout devices for large-size matrices of IR-photodiodes

  • V. P. Reva V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • I. V. Marchishin Institute of Semiconductor Physics of RAS, Novosibirsk, Russia
  • S. V. Korinets V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • F. F. Sizov V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
Keywords: photodetecting device, reading circuit, infrared photodiodes, silicon integrated circuits

Abstract

The research results are given for designed and manufactured readout devices for matrices of infrared photodiodes of formats 640×512 and 320×256. The article comments the architecture of reading circuit diagramming and its influence on the parameters of the FPU, the design of interfaces with an infrared photodiodes, the design of the reading circuit of the information charge, the influence of the geometric dimensions of the matrix elements on the output parameters of readout devices. A comparison of calculated and measured parameters of readout devices has been carried out.

Published
2011-08-24
How to Cite
Reva, V. P., Marchishin, I. V., Korinets, S. V., & Sizov, F. F. (2011). Information readout devices for large-size matrices of IR-photodiodes. Technology and Design in Electronic Equipment, (4), 24-28. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2011.4.24
Issue
No. 4 (2011): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2011 Reva V. P., Marchishin I. V., Korinets S. V., Sizov F. F.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.