Inductive negasensor

  • Ye. V. Voytscekhovskaya Vinnytsya National Technical University, Vinnytsia, Ukraine
  • L. B. Lishchynska Vinnytsya National Technical University, Vinnytsia, Ukraine
  • A. A. Lazarev Vinnytsya National Technical University, Vinnytsia, Ukraine
Keywords: inductive negasensor, L-negatron, conversion factor

Abstract

A circuit of an inductive bridge negasensor on a L-negatron device with negative differential inductance is developed. Theoretical and experimental researches which were conduc-ted have shown that introduction of negatron to the circuit of inductive bridge sensor gives three times sensitivity advantage. A model of inductive sensor and negasensor on a L-negatron is developed. Possibility of simultane-ous research for sensor and negasensor is realized in this model.

Published
2011-06-28
How to Cite
Voytscekhovskaya, Y. V., Lishchynska, L. B., & Lazarev, A. A. (2011). Inductive negasensor. Technology and Design in Electronic Equipment, (3), 20-22. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2011.3.20
Issue
No. 3 (2011): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2011 Voytscekhovskaya Ye. V., Lishchynska L. B., Lazarev A. A.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.