Investigation of the stability of polysilicon layers in SOI-structures under irradiation by electrons and hard magnetic field influence

Abstract

The properties of recrystallized polysilicon on insulator layers of p-type conductive SOI-structures with different carrier concentration irradiated with high-energy electrons flow about 10¹⁷ сm^–2 in temperature range 4,2–300 К and high magnetic fields were investigated. It was found that heavily doped laser recrystallized polysilicon on insulator layers show its radiation resistance under irradiation with high-energy electrons and magnetoresistance of such material remains quite low in magnetic field about 14 T does not exceed 1–2%. Such qulity can be applied in designing of microelectronic sensors of mechanical values operable in hard conditions of exploitation.