Electrical and topological properties of oxides films grown thermally on InSe substrates

  • V. M. Katerynchuk I. M. Frantsevich Institute for problems of materials science of NAS of Ukraine, Chernivtsi department, Ukraine
  • Z. D. Kovaluk I. M. Frantsevich Institute for problems of materials science of NAS of Ukraine, Chernivtsi department, Ukraine
  • V. V. Khomiak I. M. Frantsevich Institute for problems of materials science of NAS of Ukraine, Chernivtsi department, Ukraine
Keywords: InSe, thermal oxidation, surface resistance, atomic-force microscopy, surface topology

Abstract

The surface resistance dynamics of oxides grown thermally on InSe substrates in two crystallography planes is obtained. It is determined that resistance changes considerably only during the first 5 minutes of the oxidization period. The increase of an oxidization duration does not influence on its value, but it results in transformation of surface topology. The images of atomic-power microscopy visualize the surface nanostructurization of oxide in the form of nanoneedles. Their lateral and vertical parameters as well as their density are caused by temperature-time factors.

Published
2010-12-26
How to Cite
Katerynchuk, V. M., Kovaluk, Z. D., & Khomiak, V. V. (2010). Electrical and topological properties of oxides films grown thermally on InSe substrates. Technology and Design in Electronic Equipment, (5–6), 51-53. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.5-6.51
Issue
No. 5–6 (2010): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2010 Katerynchuk V. M., Kovaluk Z. D., Khomiak V. V.

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