Sensors of absorbed dose of ionizing radiation based on mosfet

  • V. L. Perevertaylo SE "RI of Microdevices", STS "Institute for. Single crystals" NASU, Kyiv, Ukraine
Keywords: MOS dosimeter, technology, p-, n-MOS transistor, threshold voltage, thick oxide layer, radiation sensitivity, passive conditions, dose dependence

Abstract

The requirements to technology and design of p-channel and n-channel MOS transistors with a thick oxide layer designed for use in the capacity of integral dosimeters of absorbed dose of ionizing radiation are defined. The technology of radiation-sensitive MOS transistors with a thick oxide in the p-channel and n-channel version is created.

Published
2010-12-26
How to Cite
Perevertaylo, V. L. (2010). Sensors of absorbed dose of ionizing radiation based on mosfet. Technology and Design in Electronic Equipment, (5–6), 22-29. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.5-6.22
Issue
No. 5–6 (2010): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2010 Perevertaylo V. L.

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