Effect of photocurrent amplification in the photodiode structure with both directly and back switched junctions

Abstract

On the basis of experimental data of dependence of the output photocurrent on the exciting light flow intensity at wide operating voltage range there has been made an estimation of current amplification factor of two-barrier photodiode Ag-NGaAs-nGaInAs-Ag-structure. The increase in amplification factor with the voltage increase is explained by photogeneration processes in dilated space charge layer. Such structures, having amplifying property, are of interest for creating of optical signals reception devices.