Study of silicon strain gauges under electron irradiation

  • A. A. Druzhinin Lviv Polytechnic National University, Ukraine
  • I. I. Maryamova Lviv Polytechnic National University, Ukraine
  • A. P. Kutrakov Lviv Polytechnic National University, Ukraine
  • N. S. Liakh-Kaguj Lviv Polytechnic National University, Ukraine
  • V. T. Masluk Institute of Electron Physics NASU, Uzhgorod, Ukraine
  • I. G. Mehela Institute of Electron Physics NASU, Uzhgorod, Ukraine
Keywords: silicon, tensor resistor, electron irradiation

Abstract

The characteristics of semiconductor strain gauges based on boron doped р-type silicon whiskers under high energy electron irradiation were studied. Strain gauges were irradiated at room temperature by electrons with energies 4,2–14 MeV and different doses 5·1016–1·1018 el/cm2. The main parameters of irradiated strain gauges: resistance, its temperature dependence and resistance change vs strain at –196…+100°C and –269…+20°C temperature ranges were measured. There are determined the values of electron irradiation energy and dose at which the radiation stability of strain gauges could be ensured.

Published
2010-02-26
How to Cite
Druzhinin, A. A., Maryamova, I. I., Kutrakov, A. P., Liakh-Kaguj, N. S., Masluk, V. T., & Mehela, I. G. (2010). Study of silicon strain gauges under electron irradiation. Technology and Design in Electronic Equipment, (1), 26-29. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.1.26
Issue
No. 1 (2010): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2010 Druzhinin A. A., Maryamova I. I., Kutrakov A. P., Liakh-Kaguj N. S., Masluk V. T., Mehela I. G.

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