Effect of thermal annealing on an anisotropy of electroconductivity and photoconductivity of nanostructured silicon

  • P. A. Forsh «Kurchatov Institute» Russian National Center, Moscow, Russia
  • Е. А. Forsh Lomonosov Moscow State University, Russia
  • M. N. Martyshov Lomonosov Moscow State University, Russia
  • V. Yu. Timoshenko Lomonosov Moscow State University, Russia
  • P. K. Kashkarov Lomonosov Moscow State University, Russia
Keywords: porous silicon, electrical conductivity, anisotropy, thermal oxidation, potential barriers

Abstract

An effect of thermal oxidation on the conductivity of porous silicon layers prepared by electrochemical etching of single-crystal silicon wafers with (110) orientation of the surface are investigated. The thermal oxidation is found to influence on the conductivity of porous silicon measured along various crystal directions in different ways. The obtained results are explained by the model of charge carriers transfer considering the presence of potential barriers on the boundaries of connecting silicon nanocrystals.

Published
2009-12-28
How to Cite
Forsh, P. A., ForshЕ. А., Martyshov, M. N., Timoshenko, V. Y., & Kashkarov, P. K. (2009). Effect of thermal annealing on an anisotropy of electroconductivity and photoconductivity of nanostructured silicon. Technology and Design in Electronic Equipment, (6), 35-37. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.6.35
Issue
No. 6 (2009): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2009 Forsh P. A., Forsh E. A., Martyshov M. N., Timoshenko V. Yu., Kashkarov P. K.

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This work is licensed under a Creative Commons Attribution 4.0 International License.