Multifunctional homojunction gallium arsenide n–p–m-structure

  • A. V. Karimov Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • D. M. Yodgorova Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • О. А. Abdulkhaev Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • F. A. Giyasova Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • J. T. Nazarov Navoii State Institute of Mines, Uzbekistan
Keywords: current amplification effect, phototransistor, base, barrier, modulation mode

Abstract

The brief information about created phototransistor nGaAs–рGaAs–Ag-structure are given. The processes of photogeneration of carriers in the base and in the space-charge layers of semiconductor junction as well as of metal — semiconductor junction are analysed depending on the mode of inclusion. It is shown the multifunctionality of offered homojunction structure that is perspective for creating the optical receiver or the optical transformer.

Published
2009-12-28
How to Cite
Karimov, A. V., Yodgorova, D. M., AbdulkhaevО. А., Giyasova, F. A., & Nazarov, J. T. (2009). Multifunctional homojunction gallium arsenide n–p–m-structure. Technology and Design in Electronic Equipment, (6), 31-34. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.6.31
Issue
No. 6 (2009): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2009 Karimov A. V., Yodgorova D. M., Abdulkhaev O. A., Giyasova F. A., Nazarov J. T.

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