Development of the circuit and layout of elements of an operated field emission silicon microcathodes matrix

Abstract

Examples of device elements for microsystems, developed on local three-dimensional structure, are shown. The application area of compact EKV models of the MOS-transistor for calculation of SOI MOS-transistors characteristics has been established. The calculated and experimental output characteristics of the SOI MOS-transistor, in which the under channel area is connected to a source, have been compared. The control circuits of the silicon microcathode, providing linear change of field emission currents at the fixed voltage on electrodes have been developed. The layout of the microcathode, integrated with the control circuit, which can be multiplicated into large size matrixes have been designed.