Transmission line model for nanoelectronics

  • E. A. Nelin NTUU «Kiev politechnic university», Ukraine
Keywords: nanoelectronics, resonant tunneling of electrons, crystal-like structure

Abstract

Analytical expressions for resonant parameters and characteristics of typical barrier nanoelectronic structures have been received on the basis of the transmission line model. Characteristics illustrating the efficiency of such approach are presented in the article.

Published
2009-08-30
How to Cite
Nelin, E. A. (2009). Transmission line model for nanoelectronics. Technology and Design in Electronic Equipment, (4), 30-37. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.4.30
Issue
No. 4 (2009): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2009 Nelin E. A.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.