Formation of MOS-transistors with isolation of active elements by oxiden porous silicon

  • S. P. Novosyadlyi Vasyl Stefanyk Precarpathian National University, Ivano-Frankivsk, Ukraine
  • V. M. Vivcharuk Vasyl Stefanyk Precarpathian National University, Ivano-Frankivsk, Ukraine
Keywords: microelectronics, porous silicon, epitaxy, insulation

Abstract

Ultrathin functional layers of MOS transistors require high-quality isolation of active elements. A new method for forming epitaxial structures for silicon-on-insulator technology based on porous silicon is proposed. This makes it possible to form three types of transistors — bipolar, CMOS, and DMOS.

Published
2009-06-30
How to Cite
Novosyadlyi, S. P., & Vivcharuk, V. M. (2009). Formation of MOS-transistors with isolation of active elements by oxiden porous silicon. Technology and Design in Electronic Equipment, (3), 35-39. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.3.35
Issue
No. 3 (2009): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2009 Novosyadlyi S. P., Vivcharuk V. M.

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This work is licensed under a Creative Commons Attribution 4.0 International License.