The electric characteristics simulation and structural parameters calculation of Si-based stabilitron with stabilizing voltage 6,5 V

  • N. L. Dudar JSC INTEGRAL, Minsk, Belarus
  • V. S. Syakerskiy JSC INTEGRAL, Minsk, Belarus
  • N. N. Koritko JSC INTEGRAL, Minsk, Belarus
Keywords: voltage-reference diode, process route, modeling

Abstract

The results of an optimization simulation of original manufacturing process and electric characteristics of stabilitrons with stabilizing voltage Ust=(6,5±0,5) V are presented. The flow of manufacturing process of simulated stabilitron includes the n+-type guard rings regions formation in the р-type substrate; the р–n-junction formation in the р-type substrate; intermediate oxide formation; metal deposition. The stabilizing voltage and differential resistance of the stabilitron voltage-current characteristic reverse branch values were received as the result of calculations at the normal, reduced and high temperature.

Published
2009-06-30
How to Cite
Dudar, N. L., Syakerskiy, V. S., & Koritko, N. N. (2009). The electric characteristics simulation and structural parameters calculation of Si-based stabilitron with stabilizing voltage 6,5 V. Technology and Design in Electronic Equipment, (3), 10-12. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.3.10
Issue
No. 3 (2009): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2009 Dudar N. L., Syakerskiy V. S., Koritko N. N.

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This work is licensed under a Creative Commons Attribution 4.0 International License.