Surface mounting of high-power package-free MOSFET transistors

Abstract

The processes of mounting MOSFET transistor chips onto metallic and ceramic die holders intended for surface mounting have been investigated. The quality of chip attachment was evaluated using optical inspection, non-destructive X-ray television diagnostics, photoacoustic testing, and laser microinterferometry. Results on electrical and thermal parameters are presented. It was established that mounting chips on Au–Si eutectic significantly increases the stability of the thermal parameters of high-power transistors under cyclic temperature changes.