Investigation of silicon diffusion resistors under high current density pulses

  • V. V. Kushnirenko Taras Shevchenko National University of Kyiv, Ukraine
  • G. K. Ninidze Taras Shevchenko National University of Kyiv, Ukraine
  • S. P. Pavljuk I. I. Mechnikov Odesa National University, Ukraine
  • L. D. Konovalenko I. I. Mechnikov Odesa National University, Ukraine
Keywords: silicon resistor, extreme currents, oscillogram, voltage, current generator

Abstract

Studies are described of the characteristics of silicon diffusion resistors when subjected to current pulses with densities up to destructive levels. Transient processes during the switching of resistors were investigated. The obtained results made it possible to explain the characteristic features of different sections of the current–voltage characteristics. A physical model is proposed that describes the regularities occurring in silicon resistors.

Published
2005-10-30
How to Cite
Kushnirenko, V. V., Ninidze, G. K., Pavljuk, S. P., & Konovalenko, L. D. (2005). Investigation of silicon diffusion resistors under high current density pulses. Technology and Design in Electronic Equipment, (5), 23-26. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.5.23
Issue
No. 5 (2005): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2005 Kushnirenko V. V., Ninidze G. K. , Pavljuk S. P., Konovalenko L. D.

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This work is licensed under a Creative Commons Attribution 4.0 International License.