Voltage oscillations in SOI transistors as generators

  • G. K. Ninidze Taras Shevchenko National University of Kyiv, Ukraine
  • S. P. Pavljuk Taras Shevchenko National University of Kyiv, Ukraine
  • L. V. Ishchuk Taras Shevchenko National University of Kyiv, Ukraine
  • V. V. Kushnirenko Taras Shevchenko National University of Kyiv, Ukraine
Keywords: silicon-on-insulator, voltage oscillations, generator

Abstract

Voltage and current oscillations in field-effect transistors fabricated using silicon-on-insulator (SOI) technology have been investigated. It has been shown that by changing the transistor’s supply conditions, the oscillation frequency can be varied over a wide range (0.1–1 MHz), as well as their nature — from quasi-harmonic to relaxation oscillations. This makes it possible to use such a transistor as a voltage oscillation generator. It was established that these oscillations are caused by physical processes occurring directly within the transistor. A qualitative description of these processes is provided.

Published
2005-06-30
How to Cite
Ninidze, G. K., Pavljuk, S. P., Ishchuk, L. V., & Kushnirenko, V. V. (2005). Voltage oscillations in SOI transistors as generators. Technology and Design in Electronic Equipment, (3), 54-57. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.54
Issue
No. 3 (2005): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2005 G. K. Ninidze , S. P. Pavljuk, L. V. Ishchuk, V. V. Kushnirenko

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This work is licensed under a Creative Commons Attribution 4.0 International License.