Microelectronic thermodiode sensors for extreme electronics

  • Yu. M. Shwarts V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • M. M. Shwarts V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
Keywords: extreme electronics, p–n junction, Si, sensor, temperature

Abstract

The results of fundamental and metrological studies used for the development of diode temperature sensors for extreme electronics are presented. The sensors, designed on the basis of modern industrial technology for manufacturing silicon diode chips, have been applied in multichannel systems for temperature monitoring of Unit IV at the Chernobyl Nuclear Power Plant and for controlling temperature regimes during fueling operations in Zenit-3SL launch vehicles.

Published
2005-06-30
How to Cite
Shwarts, Y. M., & Shwarts, M. M. (2005). Microelectronic thermodiode sensors for extreme electronics. Technology and Design in Electronic Equipment, (3), 30-33. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.30
Issue
No. 3 (2005): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2005 Shwarts Yu. M., Shwarts М. M.

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