The effect of heat treatment on the electrophysical properties of CdZnTe gamma-ray detectors

  • V. E. Kutniy National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • D. V. Kutniy National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • A. V. Rybka National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • A. S. Abyzov National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • L. N. Davydov National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • D. V. Nakonechny National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • I. N. Shlyakhov National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
Keywords: semiconductor detector, CdZnTe, current-voltage characteristic, ohmic contact, metal-semiconductor junction

Abstract

The effect of heat treatment (HT) on the electrophysical properties of γ-ray detectors based on a p-type CdZnTe semiconductor compound was investigated. The optimal HT conditions were determined. It was shown that the application of HT allows for a significant reduction in leakage current and an increase in operating voltage, which contributes to an improvement in the spectrometric characteristics of the detector. Experimental results are presented demonstrating that the change in the detector’s characteristics is largely due to modification of the metal-semiconductor interface rather than changes in the properties of the side surface.

Published
2005-06-30
How to Cite
Kutniy, V. E., Kutniy, D. V., Rybka, A. V., Abyzov, A. S., Davydov, L. N., Nakonechny, D. V., & Shlyakhov, I. N. (2005). The effect of heat treatment on the electrophysical properties of CdZnTe gamma-ray detectors. Technology and Design in Electronic Equipment, (3), 12-15. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.12
Issue
No. 3 (2005): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2005 Kutniy V. E., Kutniy D. V., Rybka A. V., Abyzov A. S., Davydov L. N., Nakonechny D. V., Shlyakhov I. N.

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