Design of readout circuits for mid-wavelength IR photodiode arrays

Abstract

Discussed are the problems of designing readout circuits for IR-wavelength photodiode arrays intended, for example, for reading and processing information from array radiation detectors based on materials such as InSb and HgCdTe. The potential functional capabilities of the readout circuits are examined in terms of the application of modern design rules (0.25–1.2 μm). Some characteristics of the designed medium-format readout circuit for 128×128-pixel photodiode arrays using “moderate” 1.2-μm design rules are discussed.